2SD2144STPU
TRANS NPN 20V 0.5A SPTManufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor NPN Bipolar Junction Transistor (BJT), part number 2SD2144STPU. This device features a 20V collector-emitter breakdown voltage and a maximum collector current of 500mA. With a transition frequency of 350MHz and a maximum power dissipation of 300mW, it is suitable for applications requiring moderate switching speeds. The DC current gain (hFE) is a minimum of 820 at 10mA collector current and 3V Vce. Saturation voltage (Vce(sat)) is specified at a maximum of 400mV for 20mA base current and 500mA collector current. The transistor is supplied in a Through Hole mounting type, within an SPT package. This component is commonly utilized in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-72 Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 20mA, 500mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 820 @ 10mA, 3V |
| Frequency - Transition | 350MHz |
| Supplier Device Package | SPT |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 300 mW |
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