2SD2118TLQ
TRANS NPN 20V 5A CPT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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The Rohm Semiconductor 2SD2118TLQ is an NPN bipolar junction transistor (BJT) designed for efficient power switching and amplification. This component offers a collector current (Ic) capability of 5 A and a collector-emitter breakdown voltage (Vce) of 20 V. Its high transition frequency of 150 MHz makes it suitable for applications operating at moderate radio frequencies. With a maximum power dissipation of 10 W and a junction temperature rating of 150°C, it is engineered for reliable performance in demanding environments. The device features a low saturation voltage of 1V at 4A collector current and 100mA base current, ensuring minimal power loss during switching. The 2SD2118TLQ is presented in a TO-252-3, DPAK (SC-63) surface-mount package, supplied on tape and reel. This transistor finds utility in power management circuits, voltage regulators, and general-purpose amplification within industrial and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100mA, 4A |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA, 2V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | CPT3 |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 10 W |
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