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2SD2118TLQ

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2SD2118TLQ

TRANS NPN 20V 5A CPT3

Manufacturer: Rohm Semiconductor

Categories: Single Bipolar Transistors

Quality Control: Learn More

The Rohm Semiconductor 2SD2118TLQ is an NPN bipolar junction transistor (BJT) designed for efficient power switching and amplification. This component offers a collector current (Ic) capability of 5 A and a collector-emitter breakdown voltage (Vce) of 20 V. Its high transition frequency of 150 MHz makes it suitable for applications operating at moderate radio frequencies. With a maximum power dissipation of 10 W and a junction temperature rating of 150°C, it is engineered for reliable performance in demanding environments. The device features a low saturation voltage of 1V at 4A collector current and 100mA base current, ensuring minimal power loss during switching. The 2SD2118TLQ is presented in a TO-252-3, DPAK (SC-63) surface-mount package, supplied on tape and reel. This transistor finds utility in power management circuits, voltage regulators, and general-purpose amplification within industrial and consumer electronics.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 100mA, 4A
Current - Collector Cutoff (Max)500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 500mA, 2V
Frequency - Transition150MHz
Supplier Device PackageCPT3
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)20 V
Power - Max10 W

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