2SD2098T100R
TRANS NPN 20V 5A MPT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor's 2SD2098T100R is an NPN bipolar junction transistor (BJT) designed for robust performance in demanding applications. This component boasts a 20V collector-emitter breakdown voltage and a 5A maximum collector current, making it suitable for power switching and amplification tasks. Featuring a transition frequency of 150MHz and a maximum power dissipation of 2W, it offers efficient operation within its specified parameters. The minimum DC current gain (hFE) is 180 at 500mA and 2V, with a Vce saturation of 1V at 100mA and 4A. The transistor's low collector cutoff current is 500nA (ICBO). Supplied in a Tape & Reel (TR) package, its MPT3 (TO-243AA) surface mount configuration facilitates automated assembly. This device finds application in various industrial and consumer electronics, including power supplies, motor control, and audio amplification circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100mA, 4A |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 500mA, 2V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | MPT3 |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 2 W |