2SD2096T114E
TRANS NPN 60V 3A HRTManufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor's 2SD2096T114E is an NPN bipolar junction transistor designed for demanding applications. This through-hole component features a maximum collector current (Ic) of 3A and a collector-emitter breakdown voltage (Vce) of 60V. With a power dissipation of 1.8W and a transition frequency of 8MHz, it offers robust performance in power switching and amplification circuits. The device exhibits a minimum DC current gain (hFE) of 100 at 500mA and 5V, and a Vce saturation of 1V at 200mA and 2A. The 2SD2096T114E is supplied in a Tape & Reel (TR) package, suitable for automated assembly processes. Its operating junction temperature extends up to 150°C, making it a reliable choice for industrial, automotive, and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | HRT |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA, 5V |
| Frequency - Transition | 8MHz |
| Supplier Device Package | HRT |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 1.8 W |
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