2SD2033AT114E
TRANS NPN 160V 1.5A HRTManufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
Quality Control: Learn More
Rohm Semiconductor's 2SD2033AT114E is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This through-hole component features a maximum collector current (Ic) of 1.5A and a collector-emitter breakdown voltage (Vce) of 160V. With a transition frequency of 80MHz and a maximum power dissipation of 1.8W, it offers robust performance. The device exhibits a minimum DC current gain (hFE) of 100 at 100mA and 5V, and a saturation voltage (Vce(sat)) of 2V at 100mA and 1A. The collector cutoff current (Icbo) is rated at 1µA. This transistor operates at junction temperatures up to 150°C and is supplied in a Tape & Reel (TR) package with the HRT case style. Industries utilizing this component include consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | HRT |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 5V |
| Frequency - Transition | 80MHz |
| Supplier Device Package | HRT |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 160 V |
| Power - Max | 1.8 W |
Request a Quote
Clients Also Buy
2SB1308T100P
TRANS PNP 20V 3A MPT3
2SAR372P5T100Q
TRANS PNP 120V 0.7A MPT3
2SA2093TV2Q
TRANS PNP 60V 2A ATV
