2SD1980TL
TRANS NPN DARL 100V 2A CPT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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The Rohm Semiconductor 2SD1980TL is an NPN Darlington bipolar transistor designed for high-gain switching and amplification applications. This component offers a breakdown voltage of 100V and a continuous collector current capability of 2A, with a maximum power dissipation of 10W. Featuring a minimum DC current gain (hFE) of 1000 at 1A and 2V, it ensures efficient signal amplification. The saturation voltage (Vce Sat) is specified at a maximum of 1.5V for 1mA base current and 1A collector current. This device utilizes the CPT3 package for surface mounting, suitable for applications in consumer electronics, industrial control, and power management. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Darlington |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1mA, 1A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 1A, 2V |
| Frequency - Transition | - |
| Supplier Device Package | CPT3 |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 10 W |
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