2SD1963T100S
TRANS NPN 20V 3A MPT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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The Rohm Semiconductor 2SD1963T100S is an NPN bipolar junction transistor (BJT) featuring a maximum collector current of 3A and a collector-emitter breakdown voltage of 20V. This surface-mount device, packaged in MPT3 (TO-243AA), offers a transition frequency of 150MHz and a maximum power dissipation of 2W. It exhibits a minimum DC current gain (hFE) of 270 at 500mA and 2V, with a Vce saturation specification of 450mV at 150mA and 1.5A. The current collector cutoff (ICBO) is a maximum of 500nA. Operating at junction temperatures up to 150°C, this component is suitable for applications in areas such as consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 150mA, 1.5A |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 270 @ 500mA, 2V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | MPT3 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 2 W |
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