2SD1963T100Q
TRANS GP BJT NPN 20V 3A 4-PIN(3+Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
Quality Control: Learn More
Rohm Semiconductor NPN Bipolar Junction Transistor (BJT), part number 2SD1963T100Q. This transistor offers a 20V collector-emitter breakdown voltage and a maximum collector current of 3A. It features a minimum DC current gain (hFE) of 180 at 2mA and 6V, with a saturation voltage (Vce) of 300mV at 2.5mA and 25mA. The device is rated for a maximum power dissipation of 500mW and an operating temperature up to 150°C. It is housed in a TO-243AA (MPT3) surface mount package and supplied on tape and reel. Applications include power management and general-purpose amplification in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 25mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 2mA, 6V |
| Supplier Device Package | MPT3 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 500 mW |
Request a Quote
Clients Also Buy
2SB1308T100P
TRANS PNP 20V 3A MPT3
2SAR372P5T100Q
TRANS PNP 120V 0.7A MPT3
2SD2118TLR
TRANS NPN 20V 5A CPT3
