2SD1898T100Q
TRANS NPN 80V 1A MPT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor's 2SD1898T100Q is an NPN bipolar junction transistor (BJT) designed for demanding applications. This device offers an 80V collector-emitter breakdown voltage and a maximum collector current of 1A, making it suitable for power switching and amplification circuits. With a transition frequency of 100MHz, it supports moderate to high-frequency operation. The 2SD1898T100Q is presented in the compact MPT3 surface-mount package, specifically TO-243AA, and is supplied on tape and reel for automated assembly. Key electrical characteristics include a maximum power dissipation of 2W and a low Vce(sat) of 400mV at 500mA collector current, ensuring efficient operation. The high DC current gain (hFE) of 120 at 500mA, 3V further contributes to its performance. This component finds utility in various industrial and consumer electronics requiring robust transistor performance.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 20mA, 500mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA, 3V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | MPT3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 2 W |
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