2SD1867TV2
TRANS NPN DARL 100V 2A ATVManufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor NPN Darlington Bipolar Junction Transistor, part number 2SD1867TV2. This through-hole component offers a maximum collector current (Ic) of 2 A and a collector-emitter breakdown voltage (Vce) of 100 V. Featuring a high DC current gain (hFE) of 1000 minimum at 1 A and 2 V, and a transition frequency of 80 MHz, this device is suitable for power switching and amplification applications. The maximum power dissipation is 1 W, with an operating junction temperature up to 150°C. The transistor type is NPN - Darlington, and the supplier device package is ATV. This component is commonly utilized in industrial automation, power management, and consumer electronics. Packaging is Tape & Box (TB).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | 3-SIP |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1mA, 1A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 1A, 2V |
| Frequency - Transition | 80MHz |
| Supplier Device Package | ATV |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1 W |
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