2SD1864TV2Q
TRANS NPN 50V 3A ATVManufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor's 2SD1864TV2Q is an NPN bipolar junction transistor (BJT) designed for high-performance applications. This through-hole component features a collector-emitter breakdown voltage of 50V and a continuous collector current capability of 3A, with a maximum collector cutoff current of 1µA (ICBO). The transistor exhibits a minimum DC current gain (hFE) of 120 at 500mA and 3V, and a transition frequency of 90MHz. Power dissipation is rated at 1W, with a saturation voltage (Vce Sat) of 1V at 200mA collector current and 2A base current. The 2SD1864TV2Q is packaged in a 3-SIP configuration, supplied in Tape & Box (TB) for efficient automated assembly. Its robust specifications make it suitable for use in industrial and consumer electronics, power control circuits, and general-purpose amplification tasks. The device operates at junction temperatures up to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | 3-SIP |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA, 3V |
| Frequency - Transition | 90MHz |
| Supplier Device Package | ATV |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 1 W |
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