2SD1863TV2R
TRANS NPN 80V 1A ATVManufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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The Rohm Semiconductor 2SD1863TV2R is an NPN bipolar junction transistor (BJT) designed for efficient switching and amplification applications. Featuring a collector-emitter breakdown voltage of 80V and a continuous collector current capability of 1A, this device is suitable for power handling in various electronic systems. With a transition frequency of 100MHz and a maximum power dissipation of 1W, it offers robust performance in applications requiring moderate frequency response. The minimum DC current gain (hFE) is specified at 180 at 500mA and 3V. The saturation voltage (Vce(sat)) is a maximum of 400mV at 20mA base current and 500mA collector current, minimizing power loss during switching. This component is presented in an ATV package, suitable for through-hole mounting and supplied in Tape & Box (TB) packaging. It finds utility in industrial automation, consumer electronics, and power management circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | 3-SIP |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 20mA, 500mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 500mA, 3V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | ATV |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1 W |
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