2SD1863TV2Q
TRANS NPN 80V 1A ATVManufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor NPN Bipolar Junction Transistor (BJT) 2SD1863TV2Q. This through-hole mounted component offers an 80V collector-emitter breakdown voltage and a continuous collector current capability of 1A. Featuring a transition frequency of 100MHz and a maximum power dissipation of 1W, the 2SD1863TV2Q exhibits a minimum DC current gain (hFE) of 120 at 500mA and 3V. The saturation voltage (Vce Sat) is a maximum of 400mV at 20mA base current and 500mA collector current. The device is supplied in the ATV package, with packaging options including Tape & Box (TB). This transistor is suitable for applications in industrial and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | 3-SIP |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 20mA, 500mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA, 3V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | ATV |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1 W |
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