2SD1862TV2R
TRANS NPN 32V 2A ATVManufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor's 2SD1862TV2R is a high-performance NPN bipolar junction transistor (BJT) designed for demanding applications. This device features a collector-emitter breakdown voltage (Vce) of 32V and a continuous collector current (Ic) capability of 2A, with a maximum power dissipation of 1W. It exhibits a transition frequency (fT) of 100MHz, making it suitable for moderate frequency switching and amplification tasks. The 2SD1862TV2R boasts a minimum DC current gain (hFE) of 180 at 500mA and 3V, and a low collector-emitter saturation voltage (Vce(sat)) of 800mV at 200mA and 2A. The device is provided in an ATV package, suitable for through-hole mounting and supplied in Tape & Box packaging. This component finds application in various industrial and consumer electronics sectors, including power supply circuits and general-purpose amplification.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | 3-SIP |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 500mA, 3V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | ATV |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 32 V |
| Power - Max | 1 W |
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