2SD1862TV2Q
TRANS NPN 32V 2A ATVManufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor's 2SD1862TV2Q is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This through-hole component features a collector-emitter breakdown voltage of 32V and a continuous collector current capability of up to 2A. With a DC current gain (hFE) of a minimum of 120 at 500mA and 3V, and a transition frequency of 100MHz, it offers robust performance for various electronic circuits. The device dissipates a maximum of 1W and has a collector-emitter saturation voltage of 800mV at 200mA collector current. Operating at junction temperatures up to 150°C, the 2SD1862TV2Q is packaged in a 3-SIP form factor and supplied in Tape & Box. This component finds utility in industrial automation, power control, and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | 3-SIP |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA, 3V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | ATV |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 32 V |
| Power - Max | 1 W |
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