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2SD1862TV2P

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2SD1862TV2P

TRANS GP BJT NPN 32V 2A 3-PIN AT

Manufacturer: Rohm Semiconductor

Categories: Single Bipolar Transistors

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Rohm Semiconductor's 2SD1862TV2P is an NPN bipolar junction transistor (BJT) designed for general-purpose applications. This through-hole component offers a collector-emitter breakdown voltage of 32V and a continuous collector current capability of up to 2A. With a maximum power dissipation of 1W, it is suitable for power handling in various electronic systems. The transistor exhibits a minimum DC current gain (hFE) of 120 at 2mA collector current and 1V collector-emitter voltage, with a saturation voltage (Vce(sat)) of 400mV at 5mA base current and 50mA collector current. Its low collector cutoff current (ICBO) is rated at 1µA. The 2SD1862TV2P operates reliably up to a junction temperature of 150°C and is supplied in a 3-PIN ATV package, available on tape and reel. This component finds utility in consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case3-SIP
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 50mA
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 2mA, 1V
Supplier Device PackageATV
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)32 V
Power - Max1 W

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