2SD1862TV2P
TRANS GP BJT NPN 32V 2A 3-PIN ATManufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor's 2SD1862TV2P is an NPN bipolar junction transistor (BJT) designed for general-purpose applications. This through-hole component offers a collector-emitter breakdown voltage of 32V and a continuous collector current capability of up to 2A. With a maximum power dissipation of 1W, it is suitable for power handling in various electronic systems. The transistor exhibits a minimum DC current gain (hFE) of 120 at 2mA collector current and 1V collector-emitter voltage, with a saturation voltage (Vce(sat)) of 400mV at 5mA base current and 50mA collector current. Its low collector cutoff current (ICBO) is rated at 1µA. The 2SD1862TV2P operates reliably up to a junction temperature of 150°C and is supplied in a 3-PIN ATV package, available on tape and reel. This component finds utility in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SIP |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 2mA, 1V |
| Supplier Device Package | ATV |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 32 V |
| Power - Max | 1 W |
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