2SD1859TV2R
TRANS NPN 80V 0.7A ATVManufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor NPN Bipolar Junction Transistor (BJT) with part number 2SD1859TV2R. This device features an 80V collector-emitter breakdown voltage and a continuous collector current capability of 700mA. The transition frequency is rated at 120MHz, with a minimum DC current gain (hFE) of 180 at 100mA and 3V. Power dissipation is specified at 1W. The transistor exhibits a Vce(sat) of 400mV at 50mA collector current and 50mA base current. It is housed in a 3-SIP package, supplied on tape and box (TB). This component is suitable for applications in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | 3-SIP |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 100mA, 3V |
| Frequency - Transition | 120MHz |
| Supplier Device Package | ATV |
| Current - Collector (Ic) (Max) | 700 mA |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1 W |
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