2SD1859TV2Q
TRANS NPN 80V 0.7A ATVManufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor's 2SD1859TV2Q is an NPN bipolar junction transistor (BJT) designed for through-hole mounting. This component offers an 80V collector-emitter breakdown voltage and a maximum collector current of 700mA. It features a typical DC current gain (hFE) of 120 at 100mA and 3V, with a transition frequency of 120MHz. The device dissipates a maximum power of 1W and has a low saturation voltage of 400mV at 50mA base current and 500mA collector current. The 2SD1859TV2Q is supplied in a 3-SIP package and is available in Tape & Box packaging. This transistor is suitable for applications in industrial and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | 3-SIP |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA, 3V |
| Frequency - Transition | 120MHz |
| Supplier Device Package | ATV |
| Current - Collector (Ic) (Max) | 700 mA |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1 W |
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