2SD1859TV2P
TRANS GP BJT NPN 80V 0.7A 3-PINManufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor NPN Bipolar Junction Transistor, part number 2SD1859TV2P. This through-hole device features a collector-emitter breakdown voltage of 80V and a continuous collector current capability of 700mA. The transistor exhibits a minimum DC current gain (hFE) of 180 at 2mA collector current and 6V collector-emitter voltage. Maximum power dissipation is rated at 1W, with a Vce(sat) of 500mV at 1mA base current and 10mA collector current. The collector cutoff current is a maximum of 500nA. The device operates at junction temperatures up to 150°C and is provided in a 3-SIP package. This component is commonly utilized in industrial and consumer electronics applications. Packaging is Tape & Box (TB).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | 3-SIP |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 2mA, 6V |
| Supplier Device Package | ATV |
| Current - Collector (Ic) (Max) | 700 mA |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1 W |
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