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2SD1859TV2P

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2SD1859TV2P

TRANS GP BJT NPN 80V 0.7A 3-PIN

Manufacturer: Rohm Semiconductor

Categories: Single Bipolar Transistors

Quality Control: Learn More

Rohm Semiconductor NPN Bipolar Junction Transistor, part number 2SD1859TV2P. This through-hole device features a collector-emitter breakdown voltage of 80V and a continuous collector current capability of 700mA. The transistor exhibits a minimum DC current gain (hFE) of 180 at 2mA collector current and 6V collector-emitter voltage. Maximum power dissipation is rated at 1W, with a Vce(sat) of 500mV at 1mA base current and 10mA collector current. The collector cutoff current is a maximum of 500nA. The device operates at junction temperatures up to 150°C and is provided in a 3-SIP package. This component is commonly utilized in industrial and consumer electronics applications. Packaging is Tape & Box (TB).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)
Technical Details:
PackagingTape & Box (TB)
Package / Case3-SIP
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 1mA, 10mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce180 @ 2mA, 6V
Supplier Device PackageATV
Current - Collector (Ic) (Max)700 mA
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max1 W

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Rohm Semiconductor - 2SD1859TV2P - Microchip USA