2SD1858TV2R
TRANS NPN 32V 1A ATVManufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor NPN Bipolar Junction Transistor, part number 2SD1858TV2R. This device features a 32V collector-emitter breakdown voltage and a continuous collector current of 1A. With a transition frequency of 150MHz and a maximum power dissipation of 1W, it is suitable for applications requiring efficient switching and amplification. The DC current gain (hFE) is a minimum of 180 at 100mA and 3V. Saturation voltage is a maximum of 400mV at 50mA, 500mA. This transistor is provided in a Through Hole mounting style with a 3-SIP package, supplied in Tape & Box (TB) packaging. The 2SD1858TV2R is commonly utilized in industrial, consumer electronics, and automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | 3-SIP |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 100mA, 3V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | ATV |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 32 V |
| Power - Max | 1 W |
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