2SD1858TV2P
TRANS NPN 32V 1A ATVManufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor NPN Bipolar Junction Transistor, part number 2SD1858TV2P. This through-hole device offers a collector-emitter breakdown voltage of 32V and a continuous collector current capability of 1A. With a maximum power dissipation of 1W and a transition frequency of 150MHz, it is suitable for applications requiring moderate power switching and amplification. The transistor exhibits a minimum DC current gain (hFE) of 82 at 100mA and 3V, and a saturation voltage (Vce(sat)) of 400mV at 50mA and 500mA. The device operates at an ambient temperature of up to 150°C (TJ) and is supplied in a Tape & Box (TB) package, utilizing the ATV supplier device package. This component finds application in various industrial and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | 3-SIP |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 82 @ 100mA, 3V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | ATV |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 32 V |
| Power - Max | 1 W |
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