2SD1857TV2P
TRANS NPN 120V 2A ATVManufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor's 2SD1857TV2P is an NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. This component offers a collector-emitter breakdown voltage of 120V and a continuous collector current capability of up to 2A. With a transition frequency of 80MHz and a maximum power dissipation of 1W, it is suitable for use in consumer electronics, industrial control systems, and power supply circuits. The device exhibits a minimum DC current gain (hFE) of 82 at 100mA and 5V, with a saturation voltage (Vce(sat)) of 2V at 100mA and 1A. The 2SD1857TV2P is housed in an ATV (3-SIP) package and is supplied in Tape & Box (TB) packaging for automated assembly. Its operating junction temperature range extends to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | 3-SIP |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 82 @ 100mA, 5V |
| Frequency - Transition | 80MHz |
| Supplier Device Package | ATV |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 120 V |
| Power - Max | 1 W |
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