2SD1768STPR
TRANS NPN 80V 1A SPTManufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor's 2SD1768STPR is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This through-hole component features a collector-emitter breakdown voltage of 80V and a continuous collector current capability of 1A. With a transition frequency of 100MHz and a maximum power dissipation of 300mW, it offers solid performance characteristics. The device exhibits a minimum DC current gain (hFE) of 120 at 500mA and 3V, and a Vce saturation of 400mV at 20mA collector current. This transistor is commonly utilized in consumer electronics, industrial control systems, and power management circuits. It is supplied in a Tape & Reel (TR) package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-72 Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 20mA, 500mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA, 3V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SPT |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 300 mW |
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