2SD1767T100R
TRANS NPN 80V 0.7A MPT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor's 2SD1767T100R is a high-performance NPN bipolar junction transistor. This device features a 80V collector-emitter breakdown voltage and a maximum collector current of 700mA, making it suitable for various power switching and amplification applications. With a transition frequency of 120MHz and a power dissipation capability of 2W, it excels in demanding scenarios. The minimum DC current gain (hFE) of 180 at 100mA and 3V ensures efficient amplification. It is supplied in a compact MPT3 surface mount package, specifically TO-243AA, and delivered on tape and reel. The 2SD1767T100R finds utility in industrial control, consumer electronics, and telecommunications sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 100mA, 3V |
| Frequency - Transition | 120MHz |
| Supplier Device Package | MPT3 |
| Current - Collector (Ic) (Max) | 700 mA |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 2 W |
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