2SD1767T100Q
TRANS NPN 80V 0.7A SOT-89Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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The Rohm Semiconductor 2SD1767T100Q is an NPN bipolar junction transistor (BJT) designed for efficient signal amplification and switching in a variety of electronic applications. This device features a collector-emitter breakdown voltage of 80V and a continuous collector current capability of up to 700mA. With a transition frequency of 120MHz, it is suitable for moderate frequency operations. The transistor exhibits a minimum DC current gain (hFE) of 120 at 100mA collector current and 3V collector-emitter voltage. It is supplied in a SOT-89 (MPT3) surface-mount package, offering a power dissipation of 500mW and an operating junction temperature up to 150°C. Applications include power management, general-purpose amplification, and switching circuits within industrial and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA, 3V |
| Frequency - Transition | 120MHz |
| Supplier Device Package | MPT3 |
| Current - Collector (Ic) (Max) | 700 mA |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 500 mW |
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