2SD1766T100R
TRANS NPN 32V 2A MPT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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The Rohm Semiconductor 2SD1766T100R is a high-performance NPN bipolar junction transistor (BJT) designed for demanding applications. Featuring a 32V collector-emitter breakdown voltage and a maximum collector current of 2A, this device is suitable for power switching and amplification circuits. Its 100MHz transition frequency ensures efficient operation in high-speed systems. The transistor offers a minimum DC current gain (hFE) of 180 at 500mA and 3V, with a Vce saturation of 800mV at 200mA and 2A. With a maximum power dissipation of 2W and an operating temperature up to 150°C, it is well-suited for use in industrial control, automotive, and consumer electronics. Packaged in an MPT3 (TO-243AA) surface-mount format and supplied on tape and reel, the 2SD1766T100R facilitates automated assembly processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 500mA, 3V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | MPT3 |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 32 V |
| Power - Max | 2 W |
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