2SD1766T100Q
TRANS NPN 32V 2A MPT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor NPN Bipolar Junction Transistor (BJT), part number 2SD1766T100Q. This device features a collector current (Ic) rating of 2 A and a collector-emitter breakdown voltage of 32 V. The transition frequency is 100 MHz, and it offers a maximum power dissipation of 2 W. With a minimum DC current gain (hFE) of 120 at 500 mA and 3 V, this transistor is suitable for applications requiring moderate gain and switching capabilities. The Vce saturation voltage is specified at 800 mV maximum for 200 mA collector current and 2 A collector current. It is supplied in a Tape & Reel (TR) package for automated assembly, utilizing the MPT3 surface mount footprint, also known as TO-243AA. This component finds application in power supply circuits, amplifier stages, and general-purpose switching within consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA, 3V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | MPT3 |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 32 V |
| Power - Max | 2 W |
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