2SD1763AE
TRANS NPN 160V 1.5A TO220FPManufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor's 2SD1763AE is an NPN bipolar junction transistor designed for efficient power switching applications. This component features a 160V collector-emitter breakdown voltage and a maximum collector current of 1.5A. With a transition frequency of 80MHz and a power dissipation of 2W, the 2SD1763AE is suitable for use in industrial and consumer electronics. It offers a minimum DC current gain (hFE) of 60 at 100mA and 5V, with a Vce saturation of 2V at 100mA and 1A. The transistor is housed in a TO-220FP package, facilitating through-hole mounting. Its low collector cutoff current of 1µA (ICBO) and an operating junction temperature of up to 150°C ensure reliable performance in demanding environments.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 100mA, 5V |
| Frequency - Transition | 80MHz |
| Supplier Device Package | TO-220FP |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 160 V |
| Power - Max | 2 W |
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