2SD1760TLP
TRANS NPN 50V 3A CPT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor's 2SD1760TLP is an NPN bipolar junction transistor (BJT) designed for demanding applications. This component features a collector-emitter breakdown voltage of 50V and a continuous collector current capability of 3A, with a maximum power dissipation of 15W. Its transition frequency is 90MHz, making it suitable for various signal amplification and switching tasks. The transistor exhibits a minimum DC current gain (hFE) of 82 at 500mA and 3V. The Vce saturation voltage at 2A collector current and 200mA base current is a maximum of 1V. Encased in a TO-252-3, DPAK (SC-63) surface mount package, the 2SD1760TLP is supplied on tape and reel. This device finds application in industrial automation, power management, and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 82 @ 500mA, 3V |
| Frequency - Transition | 90MHz |
| Supplier Device Package | CPT3 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 15 W |
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