2SD1758TLP
TRANS NPN 32V 2A CPT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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The Rohm Semiconductor 2SD1758TLP is an NPN Bipolar Junction Transistor (BJT) designed for robust performance in demanding applications. This device features a collector-emitter breakdown voltage of 32V and a maximum continuous collector current of 2A, with a power dissipation capability of 10W. It exhibits a transition frequency of 100MHz and a saturation voltage (Vce(sat)) of 800mV at 200mA collector current and 2A collector current. The DC current gain (hFE) is a minimum of 82 at 500mA collector current and 3V collector-emitter voltage. This transistor is packaged in a TO-252-3, DPAK (CPT3) surface-mount configuration, supplied on tape and reel. It is suitable for use in power management, industrial control, and automotive electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 82 @ 500mA, 3V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | CPT3 |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 32 V |
| Power - Max | 10 W |
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