2SD1733TLR
TRANS NPN 80V 1A CPT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor NPN Bipolar Junction Transistor (BJT) 2SD1733TLR. This NPN transistor features a collector-emitter breakdown voltage of 80V and a continuous collector current of 1A. With a maximum power dissipation of 10W and a transition frequency of 100MHz, it is suitable for general-purpose amplification and switching applications. The device offers a minimum DC current gain (hFE) of 180 at 500mA and 3V, with a Vce(sat) of 400mV at 20mA and 500mA. The collector cutoff current (ICBO) is a maximum of 1µA. Operating temperature range is up to 150°C. This component is provided in a TO-252-3, DPAK package, supplied on tape and reel. It is commonly utilized in consumer electronics, industrial control systems, and power management circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 20mA, 500mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 500mA, 3V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | CPT3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 10 W |
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