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2SD1664T100R

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2SD1664T100R

TRANS NPN 32V 1A MPT3

Manufacturer: Rohm Semiconductor

Categories: Single Bipolar Transistors

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Rohm Semiconductor NPN Bipolar Junction Transistor, part number 2SD1664T100R. This surface mount device features a collector current (Ic) capability of 1A and a collector-emitter breakdown voltage (Vce(max)) of 32V. The transistor offers a minimum DC current gain (hFE) of 180 at 100mA and 3V, with a transition frequency (fT) of 150MHz. It is supplied in a MPT3 package, suitable for high-volume manufacturing via tape and reel. The maximum power dissipation is 2W, and it operates up to an ambient temperature of 150°C. This component is frequently utilized in consumer electronics and industrial automation applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-243AA
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic400mV @ 50mA, 500mA
Current - Collector Cutoff (Max)500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce180 @ 100mA, 3V
Frequency - Transition150MHz
Supplier Device PackageMPT3
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)32 V
Power - Max2 W

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