2SD1664T100R
TRANS NPN 32V 1A MPT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor NPN Bipolar Junction Transistor, part number 2SD1664T100R. This surface mount device features a collector current (Ic) capability of 1A and a collector-emitter breakdown voltage (Vce(max)) of 32V. The transistor offers a minimum DC current gain (hFE) of 180 at 100mA and 3V, with a transition frequency (fT) of 150MHz. It is supplied in a MPT3 package, suitable for high-volume manufacturing via tape and reel. The maximum power dissipation is 2W, and it operates up to an ambient temperature of 150°C. This component is frequently utilized in consumer electronics and industrial automation applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 100mA, 3V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | MPT3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 32 V |
| Power - Max | 2 W |
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