2SD1664T100Q
TRANS NPN 32V 1A MPT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor's 2SD1664T100Q is a high-performance NPN bipolar junction transistor (BJT) designed for demanding applications. This MPT3 package component offers a collector current (Ic) of up to 1A and a collector-emitter breakdown voltage (Vce) of 32V. With a transition frequency of 150MHz and a maximum power dissipation of 2W, it is well-suited for power switching and general-purpose amplification. The device exhibits a minimum DC current gain (hFE) of 120 at 100mA and 3V, and a low saturation voltage of 400mV at 50mA and 500mA. Operating temperature reaches up to 150°C (TJ). It is supplied in Tape & Reel packaging. This transistor finds utility in industrial automation, consumer electronics, and power management circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA, 3V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | MPT3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 32 V |
| Power - Max | 2 W |
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