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2SD1664T100Q

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2SD1664T100Q

TRANS NPN 32V 1A MPT3

Manufacturer: Rohm Semiconductor

Categories: Single Bipolar Transistors

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Rohm Semiconductor's 2SD1664T100Q is a high-performance NPN bipolar junction transistor (BJT) designed for demanding applications. This MPT3 package component offers a collector current (Ic) of up to 1A and a collector-emitter breakdown voltage (Vce) of 32V. With a transition frequency of 150MHz and a maximum power dissipation of 2W, it is well-suited for power switching and general-purpose amplification. The device exhibits a minimum DC current gain (hFE) of 120 at 100mA and 3V, and a low saturation voltage of 400mV at 50mA and 500mA. Operating temperature reaches up to 150°C (TJ). It is supplied in Tape & Reel packaging. This transistor finds utility in industrial automation, consumer electronics, and power management circuits.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-243AA
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic400mV @ 50mA, 500mA
Current - Collector Cutoff (Max)500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 100mA, 3V
Frequency - Transition150MHz
Supplier Device PackageMPT3
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)32 V
Power - Max2 W

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