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2SD1664T100P

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2SD1664T100P

TRANS NPN 32V 1A MPT3

Manufacturer: Rohm Semiconductor

Categories: Single Bipolar Transistors

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The Rohm Semiconductor 2SD1664T100P is an NPN bipolar junction transistor (BJT) designed for surface mount applications. This component offers a collector-emitter breakdown voltage of 32V and a continuous collector current capability of up to 1A. It features a minimum DC current gain (hFE) of 82 at 100mA and 3V, with a transition frequency of 150MHz. The Vce saturation voltage is specified at a maximum of 400mV with base and collector currents of 50mA and 500mA, respectively. With a maximum power dissipation of 2W, the 2SD1664T100P is housed in an MPT3 package and is supplied on tape and reel. Its operating junction temperature range extends to 150°C. This transistor is suitable for various applications in consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-243AA
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic400mV @ 50mA, 500mA
Current - Collector Cutoff (Max)500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce82 @ 100mA, 3V
Frequency - Transition150MHz
Supplier Device PackageMPT3
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)32 V
Power - Max2 W

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