2SD1468STPS
TRANS NPN 15V 1A SPTManufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor's 2SD1468STPS is an NPN bipolar junction transistor (BJT) designed for power switching and amplification applications. This through-hole component offers a collector current (Ic) of up to 1A and a collector-emitter breakdown voltage (Vce) of 15V. It features a transition frequency of 150MHz and a maximum power dissipation of 300mW. The DC current gain (hFE) is a minimum of 120 at 100mA collector current and 3V collector-emitter voltage. The Vce(sat) is specified at 400mV maximum for a base current of 50mA and collector current of 500mA. The collector cutoff current (Icbo) is a maximum of 500nA. This device is supplied in the SPT package, on tape and reel. Its specifications make it suitable for use in automotive, industrial automation, and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-72 Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA, 3V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | SPT |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 15 V |
| Power - Max | 300 mW |
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