2SD1468STPQ
TRANS GP BJT NPN 15V 1A 3-PIN SPManufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor's 2SD1468STPQ is an NPN bipolar junction transistor (BJT) designed for general-purpose applications. This through-hole component features a 15 V collector-emitter breakdown voltage and a maximum collector current of 1 A. It offers a minimum DC current gain (hFE) of 180 at 2 mA collector current and 6 V collector-emitter voltage. The transistor exhibits a low saturation voltage, with a maximum Vce(sat) of 500 mV at 1 mA base current and 10 mA collector current. With a maximum power dissipation of 300 mW and an operating junction temperature of 150°C, the 2SD1468STPQ is suitable for use in various industrial and consumer electronics applications. The device is supplied in SPT packaging, provided on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-72 Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 2mA, 6V |
| Supplier Device Package | SPT |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 15 V |
| Power - Max | 300 mW |
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