2SCR574DGTL
TRANS NPN 80V 2A CPT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor 2SCR574DGTL is an NPN bipolar junction transistor (BJT) designed for surface mount applications. This component features a collector-emitter breakdown voltage of 80 V and a maximum continuous collector current of 2 A. With a transition frequency of 280 MHz and a maximum power dissipation of 10 W, it is suitable for power management and general-purpose switching applications. The device exhibits a minimum DC current gain (hFE) of 120 at 100mA and 3V, with a saturation voltage (Vce Sat) of 300mV at 50mA and 1A. Packaged in a TO-252-3, DPAK (CPT3) format and supplied on tape and reel, the 2SCR574DGTL is engineered for high-temperature operation up to 150°C (TJ). This transistor is commonly utilized in automotive electronics, industrial control systems, and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 50mA, 1A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA, 3V |
| Frequency - Transition | 280MHz |
| Supplier Device Package | CPT3 |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 10 W |
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