2SCR502EBHZGTL
TRANS NPN 30V 0.5A EMT3FManufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
Quality Control: Learn More
Rohm Semiconductor NPN Bipolar Junction Transistor, part number 2SCR502EBHZGTL. This AEC-Q101 qualified device features a 30V collector-emitter breakdown voltage and a maximum collector current of 500mA. With a transition frequency of 360MHz and a maximum power dissipation of 150mW, it is suitable for applications requiring efficient switching. The minimum DC current gain (hFE) is 200 at 100mA and 2V. Saturation voltage (Vce Sat) is a maximum of 300mV at 10mA base current and 200mA collector current. The transistor type is NPN and it operates at junction temperatures up to 150°C. The component is supplied in an EMT3F (SOT-416FL) package, also known as SC-89 or SOT-490, and is available on tape and reel for surface mounting. This component is commonly utilized in automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-89, SOT-490 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 200mA |
| Current - Collector Cutoff (Max) | 200nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 2V |
| Frequency - Transition | 360MHz |
| Supplier Device Package | EMT3F (SOT-416FL) |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 150 mW |
| Qualification | AEC-Q101 |
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