2SCR372PFRAT100Q
TRANS NPN 120V 0.7A MPT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor's 2SCR372PFRAT100Q is an NPN bipolar junction transistor (BJT) designed for automotive applications, meeting AEC-Q101 standards. This MPT3 packaged device offers a collector-emitter breakdown voltage of 120V and a continuous collector current capability of 700mA. Featuring a transition frequency of 220MHz and a maximum power dissipation of 500mW, it is suitable for signal amplification and switching in demanding automotive environments. The DC current gain (hFE) is a minimum of 120 at 100mA collector current and 5V collector-emitter voltage. Saturation voltage (Vce Sat) is specified at a maximum of 300mV with a base current of 50mA and collector current of 500mA. Operating junction temperature is rated up to 150°C. This component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: Automotive, AEC-Q101RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA, 5V |
| Frequency - Transition | 220MHz |
| Supplier Device Package | MPT3 |
| Current - Collector (Ic) (Max) | 700 mA |
| Voltage - Collector Emitter Breakdown (Max) | 120 V |
| Power - Max | 500 mW |