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2SC5880TV2Q

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2SC5880TV2Q

TRANS NPN 60V 2A ATV

Manufacturer: Rohm Semiconductor

Categories: Single Bipolar Transistors

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Rohm Semiconductor NPN Bipolar Junction Transistor, part number 2SC5880TV2Q. This device offers a 60V collector-emitter breakdown voltage and a continuous collector current of 2A, with a maximum power dissipation of 1W. Featuring a transition frequency of 200MHz and a minimum DC current gain (hFE) of 120 at 100mA and 2V, this transistor is suitable for applications requiring efficient amplification and switching. The saturation voltage (Vce(sat)) is a maximum of 500mV at 100mA and 1A. The 2SC5880TV2Q is housed in an ATV package for through-hole mounting and operates at an elevated junction temperature of up to 150°C. This component is commonly utilized in consumer electronics and industrial control systems. Supplied on tape and reel.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case3-SIP
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 100mA, 1A
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 100mA, 2V
Frequency - Transition200MHz
Supplier Device PackageATV
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max1 W

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