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2SC5876T106R

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2SC5876T106R

TRANS NPN 60V 0.5A UMT3

Manufacturer: Rohm Semiconductor

Categories: Single Bipolar Transistors

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Rohm Semiconductor NPN Bipolar Junction Transistor (BJT), part number 2SC5876T106R. This surface-mount device features a 60V collector-emitter breakdown voltage and a 500mA maximum collector current. It offers a minimum DC current gain (hFE) of 120 at 50mA and 2V, with a transition frequency of 300MHz. The transistor is packaged in a UMT3 (SC-70, SOT-323) case and supplied on a Tape & Reel (TR). Maximum power dissipation is 200mW, and it operates up to 150°C junction temperature. Applications include general-purpose amplification and switching in consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic300mV @ 10mA, 100mA
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 50mA, 2V
Frequency - Transition300MHz
Supplier Device PackageUMT3
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max200 mW

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