2SC5876T106R
TRANS NPN 60V 0.5A UMT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor NPN Bipolar Junction Transistor (BJT), part number 2SC5876T106R. This surface-mount device features a 60V collector-emitter breakdown voltage and a 500mA maximum collector current. It offers a minimum DC current gain (hFE) of 120 at 50mA and 2V, with a transition frequency of 300MHz. The transistor is packaged in a UMT3 (SC-70, SOT-323) case and supplied on a Tape & Reel (TR). Maximum power dissipation is 200mW, and it operates up to 150°C junction temperature. Applications include general-purpose amplification and switching in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 50mA, 2V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | UMT3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 200 mW |
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