2SC5876T106Q
TRANS NPN 60V 0.5A UMT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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The Rohm Semiconductor 2SC5876T106Q is an NPN bipolar junction transistor (BJT) designed for surface mount applications. This component features a collector-emitter breakdown voltage of 60V and a maximum continuous collector current of 500mA. It offers a transition frequency of 300MHz and a maximum power dissipation of 200mW. The DC current gain (hFE) is a minimum of 120 at 50mA collector current and 2V collector-emitter voltage. The saturation voltage (Vce(sat)) is a maximum of 300mV at 10mA base current and 100mA collector current. The device is housed in a UMT3 package, also known as SC-70 or SOT-323, and is supplied on tape and reel. This transistor is suitable for use in various electronic circuits across industries such as consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 50mA, 2V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | UMT3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 200 mW |
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