2SC5865TLQ
TRANS NPN 60V 1A TSMT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor NPN Bipolar Junction Transistor, part number 2SC5865TLQ. This device features a 60V collector-emitter breakdown voltage and a maximum collector current of 1A. With a transition frequency of 250MHz and a power dissipation of 500mW, it is suitable for applications requiring high-frequency switching and amplification. The DC current gain (hFE) is a minimum of 120 at 100mA and 2V. The transistor is packaged in a TSMT3 (SC-96) surface-mount package, supplied on tape and reel. It exhibits a Vce saturation of 500mV at 50mA/500mA, with a collector cutoff current (ICBO) of 1µA. This component is commonly utilized in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-96 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA, 2V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | TSMT3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 500 mW |
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