2SC5826TV2Q
TRANS NPN 60V 3A ATVManufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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The Rohm Semiconductor 2SC5826TV2Q is an NPN bipolar junction transistor (BJT) designed for robust performance in demanding applications. This through-hole component features a collector current (Ic) capability of up to 3 A and a collector-emitter breakdown voltage (Vce) of 60 V. With a transition frequency (fT) of 200 MHz and a maximum power dissipation of 1 W, it is suitable for power switching and amplification circuits. The device exhibits a minimum DC current gain (hFE) of 120 at 100 mA and 2 V, and a Vce(sat) of 500 mV at 200 mA and 2 A. Key specifications include a collector cutoff current (Icbo) of 1 µA and an operating junction temperature of 150°C. It is supplied in a 3-SIP package presented on a tape and reel. This component is utilized in industrial automation and power supply systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SIP |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA, 2V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | ATV |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 1 W |
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