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2SC5826TV2Q

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2SC5826TV2Q

TRANS NPN 60V 3A ATV

Manufacturer: Rohm Semiconductor

Categories: Single Bipolar Transistors

Quality Control: Learn More

The Rohm Semiconductor 2SC5826TV2Q is an NPN bipolar junction transistor (BJT) designed for robust performance in demanding applications. This through-hole component features a collector current (Ic) capability of up to 3 A and a collector-emitter breakdown voltage (Vce) of 60 V. With a transition frequency (fT) of 200 MHz and a maximum power dissipation of 1 W, it is suitable for power switching and amplification circuits. The device exhibits a minimum DC current gain (hFE) of 120 at 100 mA and 2 V, and a Vce(sat) of 500 mV at 200 mA and 2 A. Key specifications include a collector cutoff current (Icbo) of 1 µA and an operating junction temperature of 150°C. It is supplied in a 3-SIP package presented on a tape and reel. This component is utilized in industrial automation and power supply systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case3-SIP
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 200mA, 2A
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 100mA, 2V
Frequency - Transition200MHz
Supplier Device PackageATV
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max1 W

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