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2SC5729T106R

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2SC5729T106R

TRANS NPN 30V 0.5A UMT3

Manufacturer: Rohm Semiconductor

Categories: Single Bipolar Transistors

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This Rohm Semiconductor NPN bipolar junction transistor, part number 2SC5729T106R, is designed for general-purpose switching and amplification applications. It features a collector-emitter breakdown voltage of 30V and a continuous collector current capability of 500mA, with a maximum collector cutoff current of 1µA. The device offers a minimum DC current gain (hFE) of 180 at 50mA and 2V, and a transition frequency of 300MHz. With a maximum power dissipation of 200mW, this transistor is housed in a compact UMT3 (SC-70, SOT-323) surface-mount package, supplied on tape and reel. Its specifications make it suitable for use in consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-
Vce Saturation (Max) @ Ib, Ic300mV @ 10mA, 100mA
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce180 @ 50mA, 2V
Frequency - Transition300MHz
Supplier Device PackageUMT3
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)30 V
Power - Max200 mW

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