2SC5729T106Q
TRANS NPN 30V 0.5A UMT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor's 2SC5729T106Q is a Bipolar Junction Transistor (BJT) featuring an NPN configuration. This component offers a collector-emitter breakdown voltage of 30V and a continuous collector current capability of 500mA. With a transition frequency of 300MHz and a maximum power dissipation of 200mW, it is suitable for various low-power switching and amplification applications. The device is supplied in a compact UMT3 surface-mount package, specifically SC-70 / SOT-323, on tape and reel. Key electrical characteristics include a minimum DC current gain (hFE) of 120 at 50mA/2V and a saturation voltage (Vce(sat)) of 300mV at 10mA/100mA. This NPN transistor finds utility in consumer electronics and general-purpose signal processing circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 50mA, 2V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | UMT3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 200 mW |
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