2SC5659T2LP
TRANS NPN 25V 0.05A VMT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor NPN Bipolar Junction Transistor, part number 2SC5659T2LP. This SOT-723 (VMT3) packaged device offers a 25V collector-emitter breakdown voltage and a maximum collector current of 50mA. It features a transition frequency of 300MHz and a maximum power dissipation of 150mW. The DC current gain (hFE) is specified at a minimum of 82 at 1mA, 6V. Collector cutoff current is a maximum of 500nA. Saturation voltage (Vce(sat)) is a maximum of 300mV at 1mA base current and 10mA collector current. Operating temperature range is up to 150°C. This component is supplied in Tape & Reel packaging. Applications include general-purpose amplification and switching in portable electronics and consumer devices.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-723 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 82 @ 1mA, 6V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | VMT3 |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| Power - Max | 150 mW |
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