2SC5659T2LN
TRANS NPN 25V 0.05A VMT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor's 2SC5659T2LN is an NPN bipolar junction transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 25V and a maximum collector current of 50mA. With a transition frequency of 300MHz and a maximum power dissipation of 150mW, it is suitable for general-purpose amplification and switching in consumer electronics and industrial control systems. The device offers a minimum DC current gain (hFE) of 56 at 1mA and 6V, and a collector cutoff current of 500nA (ICBO). Saturation voltage is specified at 300mV maximum at 1mA base current and 10mA collector current. The 2SC5659T2LN is supplied in a VMT3 (SOT-723) package, on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-723 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 1mA, 6V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | VMT3 |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| Power - Max | 150 mW |
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