2SC5060TV2M
TRANS NPN DARL 90V 1A ATVManufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor's 2SC5060TV2M is a high-gain NPN Darlington bipolar junction transistor designed for general-purpose amplification and switching applications. This device features a collector-emitter breakdown voltage of 90V and a continuous collector current capability of 1A. With a minimum DC current gain (hFE) of 1000 at 500mA and 3V, and a transition frequency of 80MHz, it is suitable for applications requiring significant current amplification. The transistor exhibits a Vce (sat) of 1.5V at 1mA and 500mA. Rated for 1W power dissipation and operating at temperatures up to 150°C (TJ), the 2SC5060TV2M is housed in a 3-SIP package and supplied on tape and reel. This component finds utility in various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SIP |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1mA, 500mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 500mA, 3V |
| Frequency - Transition | 80MHz |
| Supplier Device Package | ATV |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 90 V |
| Power - Max | 1 W |
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