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2SC5060TV2M

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2SC5060TV2M

TRANS NPN DARL 90V 1A ATV

Manufacturer: Rohm Semiconductor

Categories: Single Bipolar Transistors

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Rohm Semiconductor's 2SC5060TV2M is a high-gain NPN Darlington bipolar junction transistor designed for general-purpose amplification and switching applications. This device features a collector-emitter breakdown voltage of 90V and a continuous collector current capability of 1A. With a minimum DC current gain (hFE) of 1000 at 500mA and 3V, and a transition frequency of 80MHz, it is suitable for applications requiring significant current amplification. The transistor exhibits a Vce (sat) of 1.5V at 1mA and 500mA. Rated for 1W power dissipation and operating at temperatures up to 150°C (TJ), the 2SC5060TV2M is housed in a 3-SIP package and supplied on tape and reel. This component finds utility in various industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case3-SIP
Mounting TypeThrough Hole
Transistor TypeNPN - Darlington
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 1mA, 500mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 500mA, 3V
Frequency - Transition80MHz
Supplier Device PackageATV
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)90 V
Power - Max1 W

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