2SC4672T100Q
TRANS NPN 50V 2A MPT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor's 2SC4672T100Q is an NPN bipolar junction transistor (BJT) designed for surface mount applications. This component features a collector current capability of 2 A and a collector-emitter breakdown voltage of 50 V. With a transition frequency of 210 MHz and a maximum power dissipation of 500 mW, it is suitable for use in various electronic systems. Key specifications include a minimum DC current gain (hFE) of 120 at 500 mA and 2 V, and a Vce saturation of 350 mV at 50 mA and 1 A. The transistor exhibits a collector cutoff current of 100 nA (ICBO) and operates at temperatures up to 150°C (TJ). Supplied in a MPT3 package, this device is commonly found in consumer electronics and industrial control applications. The product is provided in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 350mV @ 50mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA, 2V |
| Frequency - Transition | 210MHz |
| Supplier Device Package | MPT3 |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
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